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Applied Surface Science

Volumn 116, Issue , 1997, Pages 215-221

Characterization of vacancy-like defects in boron-implanted silicon with slow positrons

(4) Gebauer, J a Eichler, S a Krause Rehberg, R a Polity, A a

a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG (Germany)

Author keywords

Annealing behavior; Defect profiles; Homogeneous nucleation; Ion implantation; Vacancy like defects

Indexed keywords

ANNEALING; BORON; COMPUTER SIMULATION; CRYSTAL DEFECTS; ION IMPLANTATION; MONTE CARLO METHODS; NUCLEATION;

VACANCY LIKE DEFECTS;

SEMICONDUCTING SILICON;

EID: 0031547604 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(96)01057-4 Document Type: Article

Times cited : (8)

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