Preparation of ZnSe substrates by PVD and selective etching

Journal of Crystal Growth

Volumn 174, Issue 1-4, 1997, Pages 289-292

  Sukegawa, Tokuzo ^a   Kadotsuji, Fumiyasu ^b   Tsujimoto, Tomiyuki ^a   Kaji, Masanori ^a   Kimura, Masakazu ^a   Tanaka, Akira ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

^b NEW ENERGY AND INDUSTRIAL TECHNOLOGY DEVELOPMENT ORGANIZATION   (Japan)

Author keywords

GaAs; PVD; Selective etching; ZnSe substrate

Indexed keywords

CRYSTAL GROWTH; CRYSTALLINE MATERIALS; ETCHING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SUBSTRATES; VAPOR DEPOSITION;

PHYSICAL VAPOR DEPOSITION; SELECTIVE ETCHING; ZINC SELENIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0031547503     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01161-X     Document Type: Article

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