Growth kinetics of nanoscale SiO 2 layer in a nitric oxide (NO) ambient

Applied Surface Science

Volumn 113-114, Issue , 1997, Pages 595-599

  Fukuda, Hisashi ^a   Koyama, Noboru ^a   Endoh, Toshiaki ^a   Nomura, Shigeru ^a  

^a MURORAN INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Gate oxide films; Metal oxide semiconductor (MOS) structure; Nitridation; Oxynitride films

Indexed keywords

ACTIVATION ENERGY; ETCHING; FILM GROWTH; INTERFACES (MATERIALS); MOS DEVICES; NITRIDING; NITROGEN OXIDES; OXIDATION; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; THERMAL EFFECTS; ULTRATHIN FILMS;

GATE OXIDE FILMS; NITRIC OXIDE; NITRIDATION; OXYNITRIDE FILMS;

REACTION KINETICS;

EID: 0031547497     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00803-3     Document Type: Article

References (20)

1. J.R. Brews, W. Fichtner, E.H. Nicollian and S.M. Sze, IEEE Electron Device Lett. EDL-1 (1980) 2.
2. Y. Kamigaki and Y. Ito, J. Appl. Phys. 48 (1977) 2891.
3. A.M. Goodman and J.M. Breece, J. Electrochem. Soc. 117 (1970) 982.
4. R.R. Razouk and B.E. Deal, J. Electrochem. Soc. 126 (1979) 1573.
5. H. Fukuda, T. Arakawa and S. Ohno, Electron. Lett. 26 (1990) 1505.
6. H. Hwang, W. Ting, B. Maiti, D.L. Kwong and J. Lee, Appl. Phys. Lett. 57 (1990) 1010.
7. A. Uchiyama, H. Fukuda, T. Hayashi, T. Iwabuchi and S. Ohno, Technical Digest of International Electron Devices Meeting (IEDM), San Francisco, 1990, Electron Devices Society of IEEE (1990) p. 425.
8. 2 Interface, Los Angeles, 1996, The Electrochemical Society (1996) p. 15.
9. Z.-Q. Yao, H.B. Harrison, S. Dimitrijev and D. Sweatman, Appl. Phys. Lett. 64 (1994) 3584.
10. 2 Interface, Los Angeles, 1996, The Electrochemical Society (1996) p. 722.
11. 2 Interface, Los Angeles, 1996, The Electrochemical Society (1996) p. 687.
12. M. Yasuda, H. Fukuda, T. Iwabuchi and S. Ohno, Jpn. J. Appl. Phys. 30 (1991) 3597.
13. Y. Hayafuji and K. Kajiwara, J. Electrochem. Soc. 129 (1982) 2102.
14. T.Y. Chu, W. Ting, J.H. Ahn, S. Lin and D.L. Kwong, Appl. Phys. Lett. 59 (1991) 1412.
15. H. Fukuda, M. Yasuda, T. Iwabuchi and S. Ohno, Appl. Surf. Sci. 60-61 (1992) 359.
16. B.E. Deal and A.S. Grove, J. Appl. Phys. 36 (1965) 3770.
17. A.S. Grove, Physics and Technology of Semiconductor Devices (John Wiley & Sons, New York, 1967).
18. T. Ito and T. Abe, Appl. Phys. Lett. 53 (1988) 39.
19. E. Briner, C. Meiner and A. Rothen, J. Chem. Phys. 23 (1926) 609.
20. W. Baker and A.L. Mossman, Nitric Oxide, Mathson Gas Data Book, 6th Ed. (Lyndhust, New Jersey, 1980) p. 514.