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Volumn 113-114, Issue , 1997, Pages 130-134

Optical and structural studies of nanocrystalline silicon thin film grown by rapid thermal annealing

Author keywords

Infrared absorption; Nanocrystalline Si; Optical absorption coefficient; Photoluminescence; Rapid thermal annealing; Thermoabsorption spectroscopy

Indexed keywords

ABSORPTION SPECTROSCOPY; AMORPHOUS SILICON; ANNEALING; CRYSTAL STRUCTURE; GRAIN SIZE AND SHAPE; LIGHT EMISSION; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; THERMAL EFFECTS; THIN FILMS; VACUUM APPLICATIONS;

EID: 0031547430     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00892-6     Document Type: Article
Times cited : (2)

References (12)
  • 9
    • 0021552266 scopus 로고
    • ed. J.I. Pankove Academic Press, New York, ch. 4
    • P.J. Zanzucchi, in: Semiconductors and Semimetals, Vol. 21, ed. J.I. Pankove (Academic Press, New York, 1984) ch. 4, p. 113.
    • (1984) Semiconductors and Semimetals , vol.21 , pp. 113
    • Zanzucchi, P.J.1
  • 11
    • 0542446454 scopus 로고
    • eds. R.K. Willardson and A.C. Beer Academic Press, New York, ch. 4
    • B. Batz, in: Semiconductors and Semimetals, Vol. 9, eds. R.K. Willardson and A.C. Beer (Academic Press, New York, 1972) ch. 4, p. 316.
    • (1972) Semiconductors and Semimetals , vol.9 , pp. 316
    • Batz, B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.