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Applied Surface Science

Volumn 113-114, Issue , 1997, Pages 709-713

The study of aging mechanism in ZnS:Mn thin-film electroluminescent devices grown by MOCVD

(4) Wang, C W a Sheu, T J a Su, Y K b Yokoyama, M b

a Kaohsiung Polytechnic Institute Taiwan (Taiwan)

b NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRONS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULES; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; ZINC SULFIDE;

BRIGHTNESS; ELECTRON TRAP; THRESHOLD VOLTAGE;

THIN FILM DEVICES;

EID: 0031547427 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(96)00931-2 Document Type: Article

Times cited : (24)

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