Electric field dependence of intersubband transitions in GaAs/AlGaAs single quantum wells

Applied Surface Science

Volumn 113-114, Issue , 1997, Pages 90-96

  Mathur, A ^a   Ohno, Y ^a   Matsukura, F ^a   Ohtani, K ^a   Akiba, N ^a   Kuroiwa, T ^a   Nakajima, H ^a   Ohno, H ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

FTIR spectroscopy; Intersubband transitions; Molecular beam epitaxy; Quantum wells

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRON TRANSITIONS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS;

INTERSUBBAND TRANSITIONS; JOULE HEATING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031547425     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00879-3     Document Type: Article

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