Morphological instabilities, segregation, and reconstruction at GaAs/AlxGa1 - xAs interfaces: A more realistic picture of the normal and inverted interface

Journal of Crystal Growth

Volumn 174, Issue 1-4, 1997, Pages 522-530

  Ploog, Klaus H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

Aluminium gallium arsenide; Atomic force microscopy; Gallium arsenide; Growth kinetics; Interfaces; Micro photoluminescence; Molecular beam epitaxy; Scanning tunneling microscopy; X ray diffraction

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRONIC PROPERTIES; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; REACTION KINETICS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

MICROPHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM GALLIUM ARSENIDE;

HETEROJUNCTIONS;

EID: 0031547354     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00054-7     Document Type: Article

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