Optical properties of excimer laser annealed polycrystalline Si by spectroscopic ellipsometry

Applied Surface Science

Volumn 113-114, Issue , 1997, Pages 489-492

  Yu, G ^a   Soga, T ^a   Shao, C L ^a   Jimbo, T ^a   Umeno, M ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Critical point; Dielectric function; Excimer laser; Polycrystalline Si; Spectroscopic ellipsometry

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; ELLIPSOMETRY; EXCIMER LASERS; LOW TEMPERATURE EFFECTS; OPTICAL PROPERTIES; POLYCRYSTALLINE MATERIALS; REGRESSION ANALYSIS; SILICA; TRANSMISSION ELECTRON MICROSCOPY;

BRUGGEMAN EFFECTIVE MEDIUM APPROXIMATION; LINEAR REGRESSION ANALYSIS; LOW TEMPERATURE CHEMICAL VAPOR DEPOSITION; SPECTROSCOPIC ELLIPSOMETRY;

SEMICONDUCTING SILICON;

EID: 0031547331     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00889-6     Document Type: Article

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