Epitaxial growth of SiGe thin films by ion-beam sputtering

Applied Surface Science

Volumn 113-114, Issue , 1997, Pages 43-47

  Sasaki, Kimihiro ^a   Nakata, Keiichi ^a   Hata, Tomonobu ^a  

^a KANAZAWA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ION BEAMS; POLYCRYSTALLINE MATERIALS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; SURFACE ROUGHNESS; THERMAL EFFECTS; THIN FILMS;

HOMO EPITAXIAL GROWTH; ION BEAM SPUTTERING; SILICON GERMANIDE;

EPITAXIAL GROWTH;

EID: 0031547301     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00802-1     Document Type: Article

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