Impurity transients in multiple crystal growth from a single crucible for EFG silicon octagons

Journal of Crystal Growth

Volumn 174, Issue 1-4, 1997, Pages 170-175

  Cao, J ^a   Prince, M ^a   Kalejs, J P ^a  

^a ASE Americas Inc   (United States)

Author keywords

DLTS; Impurity segregation; Melt growth; Silicon; Solar cells

Indexed keywords

CRUCIBLES; CRYSTAL GROWTH; CRYSTAL IMPURITIES; DEEP LEVEL TRANSIENT SPECTROSCOPY; FILM GROWTH; SILICON SOLAR CELLS;

EDGE DEFINED FILM FED GROWTH (EFG);

SILICON WAFERS;

EID: 0031547289     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01100-1     Document Type: Article

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