Surface characterization using infrared reflection absorption spectroscopy on Si(100) processed by wet cleaning and gas treatment

Applied Surface Science

Volumn 113-114, Issue , 1997, Pages 398-402

  Imai, Takaaki ^a   Kurioka, Yoshiaki ^a   Nagataki, Nobuhiko ^a   Okuyama, Masanori ^a   Hamakawa, Yoshihiro ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

F 2 treatment; Infrared reflection absorption spectroscopy; Si(100) surface; Si H bond; Wet treatment

Indexed keywords

ABSORPTION SPECTROSCOPY; ATOMIC FORCE MICROSCOPY; CHEMICAL BONDS; DESORPTION; FLUORINE COMPOUNDS; INFRARED SPECTROSCOPY; MORPHOLOGY; SILICON WAFERS; SURFACE CLEANING; SURFACE TREATMENT;

GAS TREATMENT; INFRARED REFLECTION ABSORPTION SPECTROSCOPY; WET CLEANING;

SURFACE STRUCTURE;

EID: 0031547255     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00820-3     Document Type: Article

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