Interface shape and growth rate analysis of Se/GaAs bulk crystals grown in the NASA crystal growth furnace (CGF)

Journal of Crystal Growth

Volumn 174, Issue 1-4, 1997, Pages 220-225

  Bly, J M ^a   Kaforey, M L ^a   Matthiesen, D H ^a   Chait, A ^b  

^a CASE WESTERN RESERVE UNIVERSITY   (United States)

^b NASA GLENN RESEARCH CENTER   (United States)

Author keywords

Characterization; Gallium arsenide; Interface demarcation; Microgravity; Peltier effect; Semiconductor

Indexed keywords

CRYSTAL GROWTH; MATHEMATICAL MODELS; PHASE INTERFACES; SELENIUM; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SPATIAL VARIABLES MEASUREMENT;

CRYSTAL GROWTH FURNACE; PELTIER EFFECT;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031547232     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01108-6     Document Type: Article

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