Comparison of chlorocarbons as an additive during MOVPE for flat burying growth of InP

Journal of Crystal Growth

Volumn 174, Issue 1-4, 1997, Pages 611-615

  Takeuchi, T ^a   Tanahashi, T ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Chlorocarbon; Cl addition; Flat burying growth; InP; MOVPE; RIE etched mesa

Indexed keywords

CHLORINE COMPOUNDS; COMPOSITION EFFECTS; DECOMPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; REACTION KINETICS; REACTIVE ION ETCHING; SEMICONDUCTOR GROWTH;

CHLOROCARBONS; FLAT BURYING GROWTH;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0031547217     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00066-3     Document Type: Article

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