Atomic-layer etching of Ge using an ultraclean ECR plasma

Applied Surface Science

Volumn 112, Issue , 1997, Pages 187-190

  Sugiyama, Takayuki ^a   Matsuura, Takashi ^a   Murota, Junichi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Ar + ion induced reaction; Atomic layer etching; Chlorine adsorption; ECR plasma; Ge, Self limited process

Indexed keywords

ADSORPTION; ATOMS; CHLORINE; ELECTRON CYCLOTRON RESONANCE; ETCHING; ION BOMBARDMENT; PLASMAS;

ATOMIC LAYER ETCHING; ION FLUX DENSITY DISTRIBUTION; ION INDUCED REACTION;

GERMANIUM;

EID: 0031546951     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)01026-4     Document Type: Article

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