Selective area growth at multi-atomic-height steps arranged on GaAs ( 111) A vicinal surfaces by atomic layer epitaxy

Applied Surface Science

Volumn 112, Issue , 1997, Pages 132-137

  Lee, Jeong Sik ^a   Isshiki, Hideo ^a   Sugano, Takuo ^a   Aoyagi, Yoshinobu ^a  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WIRES; SURFACES;

ATOMIC LAYER EPITAXY; GROWTH SUPPRESSION; MULTI ATOMIC HEIGHT STEPS; QUANTUM WIRE ARRAY; SELECTIVE AREA GROWTH; VICINAL SURFACES;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0031546950     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00990-7     Document Type: Article

References (7)

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3. T. Fukui and H. Saito, J. Cryst. Growth 115 (1996) 61.
4. H. Isshiki, Y. Aoyagi, T. Sugano, S. Iwai and T. Meguro, Appl. Phys. Lett. 63 (1993) 1528.
5. J-S. Lee, S. Iwai, H. Isshiki, T. Meguro, T. Sugano and Y. Aoyagi, J. Cryst. Growth 160 (1996) 21.
6. J-S. Lee, H. Isshiki, T. Sugano and Y. Aoyagi, submitted to J. Cryst. Growth.
7. J-S. Lee, S. Iwai, H. Isshiki, T. Meguro, T. Sugano and Y. Aoyagi, Appl. Surf. Sci. 103 (1996) 275