TEAMS depth profiles in semiconductors

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 123, Issue 1-4, 1997, Pages 571-574

  Datar, S A ^a   Renfrow, S N ^a   Guo, B N ^a   Anthony, J M ^b   Zhao, Z Y ^c   McDaniel, F D ^a  

^a UNIVERSITY OF NORTH TEXAS   (United States)

^b TEXAS INSTRUMENTS   (United States)

^c VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

IMPURITIES; ION IMPLANTATION; SEMICONDUCTING SILICON; TRACE ELEMENTS;

TRACE ELEMENT ACCELERATOR MASS SPECTROMETRY (TEAMS);

MASS SPECTROMETERS;

EID: 0031546913     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00703-3     Document Type: Article

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