Selective area growth of GaP on Si by MOCVD

Journal of Crystal Growth

Volumn 172, Issue 1-2, 1997, Pages 53-57

  Lee, Jong Won ^a   Salzman, Joseph ^a   Emerson, Dave ^a   Shealy, James R ^a   Ballantyne, Joseph M ^a  

^a School of Operations Research and Industrial Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SILICON NITRIDE; SILICON WAFERS; SINGLE CRYSTALS; SUBSTRATES;

CRYSTAL PLANES; FOCUSED RAMAN SPECTROSCOPY; SELECTIVE AREA GROWTH; SIDE WALLS;

CRYSTAL GROWTH;

EID: 0031546758     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00738-5     Document Type: Article

References (7)

1. T. Suzuki, T. Soga, T. Jimbo and M. Umeno, J. Crystal Growth 115 (1991) 158.
2. T. Soga, T. Jimbo and M. Umeno, J. Crystal Growth 146 (1995) 554.
3. J. Salzman, Selective Epitaxial Growth of III-V Semiconductor, presented at the Danish Physical Soc. Ann. Meet., Odense, June 2-3, 1994.
4. B.S. Meyerson, F.J. Himpsel and K.J. Uram, Appl. Phys. Lett. 57 (1990) 1034.
5. B.L. Pitts, D.T. Emerson, M.J. Matragrano, K.L. Whittingham, B.P. Butterfield and J.R. Shealy, Proc. of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits (1993) p. 122.
6. H. Kroemer, J. Crystal Growth 81 (1987) 193.
7. A. Anastassiadou, Y.S. Raptis and E. Anastassakis, J. Appl. Phys. 60 (1986) 2924.