Heteroepitaxial growth of Y2O3 films on Si(100) by reactive ionized cluster beam deposition

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 121, Issue 1-4, 1997, Pages 170-174

  Choi, S C ^a   Cho, M H ^a   Whangbo, S W ^a   Whang, C N ^a   Hong, C E ^b   Kim, N Y ^b   Jeon, J S ^c   Lee, S I ^c   Lee, M Y ^c  

^a Yonsei University   (South Korea)

^b Soongsil University   (South Korea)

^c SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; DEPOSITION; EPITAXIAL GROWTH; FILMS; OXIDES; POLYCRYSTALS; SILICON; SUBSTRATES; THERMAL EFFECTS;

YTTRIUM OXIDES;

YTTRIUM COMPOUNDS;

EID: 0031546232     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00589-7     Document Type: Article

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