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Volumn 121, Issue 1-4, 1997, Pages 146-150

Photoluminescence studies of epitaxial Si1-xGex and Si1-x-yGexCy, layers on Si formed by ion beam synthesis

Author keywords

[No Author keywords available]

Indexed keywords

CARBON INORGANIC COMPOUNDS; DEPOSITION; EPITAXIAL GROWTH; ION BEAMS; PHOTOLUMINESCENCE; SILICON; SILICON COMPOUNDS; SUBSTRATES;

EID: 0031546196     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00586-1     Document Type: Article
Times cited : (2)

References (19)
  • 9
    • 0030197021 scopus 로고    scopus 로고
    • Erratum
    • N. Kobayashi, M. Hasegawa, N. Hayashi, H. Tanoue, H. Shibata and Y. Makita, Nucl. Instr. and Meth. B 106 (1995) 289, and B 114 (1996) 403 (Erratum).
    • (1996) Nucl. Instr. and Meth. B , vol.114 , pp. 403
  • 11
    • 0003222939 scopus 로고
    • Vol. 10.05, F1389-92 American Society for Testing and Material, Philadelphia
    • 1992 Annual Book of ASTM Standards, Vol. 10.05, F1389-92 (American Society for Testing and Material, Philadelphia, 1992) p. 682.
    • (1992) 1992 Annual Book of ASTM Standards , pp. 682


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.