Patterning silicon carbide on silicon by ion modification of C60 films

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 121, Issue 1-4, 1997, Pages 151-153

  Moro, L ^a   Paul, A ^a   Lorents, D C ^a   Malhotra, R ^a   Ruoff, R S ^a   Jiang, L ^a  

^a SRI INTERNATIONAL   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; FILMS; ION BEAMS; ION BOMBARDMENT; IONS; SILICON CARBIDE; THERMAL EFFECTS; VAPOR DEPOSITION;

ION MODIFICATION; PATTERNING;

FULLERENES;

EID: 0031546195     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00587-3     Document Type: Article

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