AlGaAs/GaAs-heterostructure cw laser diodes with a working output optical power of 3 W (λ = 0.81 μm) and an operating life of 2000 hours

Technical Physics Letters

Volumn 23, Issue 4, 1997, Pages 331-332

  Demidov, D M ^a   Katsavets, N I ^a   Leus, R V ^a   Ter Martirosyan, A L ^a   Chalyi V P ^a  

^a ZAO Semiconductor Devices   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0031536616     PISSN: 10637850     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1261831     Document Type: Article

References (5)

1. S. Yu. Karpov, G. de la Cruz, V. E. Myachin et al., Pis'ma Zh. Tekh. Fiz. 17(7), 31 (1991) [Sov. Tech. Phys. Lett. 17, 248 (1991)].
2. V. P. Chaly et al., Semicond. Sci. Technol. 11, 372 (1996).
3. V. P. Chaly et al., Semicond. Sci. Technol. 9, 345 (1994).
4. G. A. Gavrilov et al., Pis'ma Zh. Tekh. Fiz. 17(19), 1 (1991) [Sov. Tech. Phys. Lett. 17, 681 (1991)].
5. G. Thompson, Physics of Semiconductor Laser Devices (Wiley, New York, 1980), pp. 28-29.