Determination of the sign of the conduction-electron g factor in semiconductor quantum wells by means of the Hanle effect and spin-quantum-beat techniques

Physics of the Solid State

Volumn 39, Issue 4, 1997, Pages 681-685

  Kalevich, V K ^a   Zakharchenya, B P ^a   Kavokin, K V ^a   Petrov, A V ^a   Le Jeune, P ^b   Marie, X ^b   Robart, D ^b   Amand, T ^b   Barrau, J ^b   Brousseau, M ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b Lab de Phys de la Matiere Cond   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0031525325     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1129913     Document Type: Article

References (26)

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