Structural and electrical properties of TlNaMoO4

Indian Journal of Pure and Applied Physics

Volumn 35, Issue 6, 1997, Pages 397-401

  Choudhary, R N P ^a   Nanda Goswami, M L ^a   Sharma, S ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0031525159     PISSN: 00195596     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

1. Deh K K, Ferroelectrics, 82 (1988) 15.
2. Iijima Tomita Y, Takayama R & Ueda I, J Appl Phys, 60 (1986) 361.
3. Okuyama M & Hamakawa Y, Ferroelectrics, 118 (1991) 261.
4. Surowaikz & Czekaj D, Thin Solid Films, 214 (1992) 78.
5. Yadav K L, Choudhary R N P & Chaki T K, J Matter Sci, 27 (1991) 5244.
6. Bera S & Choudhary R N P, Indian J Pure Appl Phys, 33 (1995) 306.
7. Bera S & Choudhary R N P, Matter Letts, 22 (1995) 197.
8. Aleksandrav K S, Blat D H, Zinenko V I, Ferroelectrics, 54 (1984) 233.
9. Choudhary R N P, Nanda Goswami M L & Sharma S, Indian J Phys, 71A (1997) 153.
10. Pilgrim S M, Sutherland A F & Winzer S R, J Am Ceram Soc, 73 (1990) 3122.
11. Buchanan R C, Ceramic materials for electronics, (Marcel Dekker Inc, New York and Basel), p 70, 1986.