Scaling of four-photon absorption in InAs

Journal of the Optical Society of America B: Optical Physics

Volumn 14, Issue 7, 1997, Pages 1616-1624

  Hasselbeck, M P ^a,c,d   Van Stryland, E W ^a   Sheik Bahae, M ^b  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b UNIVERSITY OF NEW MEXICO   (United States)

^c MAX BORN INSTITUT   (Germany)

^d PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0031520180     PISSN: 07403224     EISSN: None     Source Type: Journal    
DOI: 10.1364/JOSAB.14.001616     Document Type: Article

References (65)

1. E. W. Van Stryland, H. Vanherzeele, M. Woodall, M. J. Soileau, A. L. Smirl, S. Guha, and T. F. Boggess, "Two photon absorption, nonlinear refraction, and optical limiting in semiconductors," Opt. Eng. 24, 613 (1985).
2. S. S. Mitra, N. H. K. Judell, A. Vaidyanathan, and A. H. Guenther, "Three-photon absorption in direct-gap crystals," Opt. Lett. 7, 307 (1982), and references therein.
3. D. W. Craig, "Optical nonlinearities in CdHgTe," Ph.D. dissertation (Heriot-Watt University, Edinburgh, 1987).
4. J. U. Kang, A. Villeneuve, M. Sheik-Bahae, G. I. Stegeman, K. Al-hemyari, J. S. Aitchison, and C. N. Ironside, "Limitation due to three-photon absorption on the useful spectral range for nonlinear optics in AlGaAs below half band gap," Appl. Phys. Lett. 65, 147 (1994).
5. I. M. Catalano, A. Cingolani, and A. Minafara, "Four photon absorption in ZnS," Solid State Commun. 16, 1109 (1975).
6. I. M. Catalano, A. Cingolani, and A. Minafara, "Multiphoton transitions at the direct and indirect bandgaps of gallium phosphide," Solid State Commun. 16, 417 (1975).
7. E. J. Canto-Said, D. J. Hagan, J. Young, and E. W. Van Stryland, "Degenerate four wave mixing measurements of high order nonlinearities in semiconductors," IEEE J. Quantum Electron. 27, 2274 (1991).
8. S. C. Jones, P. Braunlich, R. T. Casper, X. A. Shen, and P. Kelly, "Recent progress on laser-induced modification and intrinsic bulk damage of widegap optical materials," Opt. Eng. 28, 1039 (1989).
9. M. J. Soileau, W. E. Williams, and E. W. Van Stryland, "Laser-induced damage and the role of self-focusing," Opt. Eng. 28, 1133 (1989).
10. 2 laser wavelengths in germanium," Opt. Lett. 6, 76 (1981).
11. R. B. James and D. L. Smith, "Theory of nonlinear optical absorption associate with free carriers in semiconductors," IEEE J. Quantum Electron. 18, 1841 (1982).
12. -2.
13. M. Sheik-Bahae, D. C. Hutchings, D. J. Hagan, and E. W. Van Stryland, "Dispersion of bound electronic nonlinear refraction in solids," IEEE J. Quantum Electron. 27, 1296 (1991).
14. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
15. S. A. Jamison and A. V. Nurmikko, "Avalanche formation and high intensity transmission limit in InAs, InSb, and HgCdTe," Phys. Rev. B 19, 5185 (1979).
16. 2 laser light," J. Appl. Phys. 54, 3220 (1983).
17. L. V. Keldysh, "Ionization in the field of a strong electromagnetic wave," Sov. Phys. JETP 20, 1307 (1965).
18. H. D. Jones and H. R. Reiss, "Intense field effects in solids," Phys. Rev. B 16, 2466 (1977).
19. 4N - 3.
20. 2 laser pulse generation by optical free induction decay," Appl. Phys. Lett. 25, 580 (1974).
21. 2 measurements," Opt. Lett. 14, 955 (1989).
22. J. R. Dixon, "Photoelectromagnetic effect in indium arsenide," Phys. Rev. 107, 374 (1957).
23. T. Elsaesser, R. Baüerle, and W. Kaiser, "Picosecond infrared spectroscopy of molecules and semiconductors," Infrared Phys. 29, 503 (1989).
24. 2 laser system," Appl. Opt. 24, 666 (1985).
25. F. Matossi and F. Stern, "Temperature dependence of optical absorption in p-type indium arsenide," Phys. Rev. 111, 472 (1958).
26. R. Culpepper and J. Dixon, "Free carrier absorption in n-type indium arsenide," J. Opt. Soc. Am. 58, 96 (1968).
27. M. P. Hasselbeck, E. W. Van Stryland, and M. Sheik-Bahae, "Three and four-photon absorption in InAs," in Quantum Electronics and Laser Science Conference QELS, Vol. 10 of 1996 OSA Technical Digest Series (Optical Society of America, Washington, D.C., 1996), pp. 126-127.
28. J. R. Dixon and J. M. Ellis, "Optical properties of n-type indium arsenide in the fundamental absorption edge region," Phys. Rev. 123, 1560 (1961).
29. O. Madelung, Physics of III-V Compounds (Wiley, New York, 1964).
30. M. P. Hasselbeck, E. W. Van Stryland, and M. Sheik-Bahae, "Dynamic band unblocking and leakage two-photon absorption in InSb," Phys. Rev. B (to be published).
31. G. Bauer and H. Kahlert, "Low temperature non-ohmic galvanomagnetic effects in degenerate n-type InAs," Phys. Rev. B 5, 566 (1972).
32. J. A. Kash and J. C. Tsang, "Light scattering and other secondary emission studies of dynamic processes in semiconductors," in Light Scattering in Solids VI, M. Cardona and A. Guntherodt, eds. (Springer-Verlag, Berlin, 1991).
33. K. L. Vodopyanov, H. Graener, and C. C. Phillips, "Transient mid-ir picosecond spectroscopy of indium arsenide at room temperature: evidence of spectral hole burning due to nonthermalized carriers," Phys. Rev. B 47, 6831 (1993).
34. R. Luzzi and A. Vasconcellos, "Relaxation processes in nonequilibrium semiconductor plasma," in Semiconductors Probed by Ultrafast Laser Spectroscopy, R. R. Alfano, ed. (Academic, Orlando, Fla., 1984), Vol. 1.
35. M. Kim, A. Das, and S. Senturia, "Electron scattering interaction with coupled plasmon-polar phonon modes in semiconductors," Phys. Rev. B 18, 6890 (1978).
36. J. Young, N. Henry, and P. Kelly, "Full dynamic screening calculation of hot electron scattering rates in multicomponent semiconductor plasma," Solid-State Electron. 32, 1567 (1989).
37. J. Young, P. Kelly, and N. Henry, "Carrier density dependence of hot electron scattering rates in quasi-equilibrium electron-hole plasmas," Solid State Commun. 78, 343 (1991).
38. B. K. Ridley, Quantum Processes in Semiconductors (Clarendon, Oxford, 1988).
39. T. Elsaesser, R. J. Bäuerle, and W. Kaiser, "Hot phonons in InAs observed via picosecond free-carrier absorption," Phys. Rev. B 40, 2976 (1989).
40. E. D. Grann, K. T. Tsen, and D. K. Ferry, "Nonequilibrium phonon dynamics and electron distribution functions in InP and InAs," Phys. Rev. B 53, 9847 (1996).
41. E. O. Kane, "Electron scattering by pair production in silicon," Phys. Rev. 159, 624 (1967).
42. E. O. Kane, "Band structure of indium antimonide," J. Phys. Chem. Solids 1, 249 (1957).
43. K. Brennan and K. Hess, "High field transport in GaAs, InP, and InAs," Solid-State Electron. 27, 347 (1984).
44. K. Brennan and N. S. Mansour, "Monte Carlo calculation of electron impact ionization in bulk InAs and HgCdTe," J. Appl. Phys. 69, 7844 (1991).
45. L. V. Keldysh, "Concerning the theory of impact ionization in a semiconductor," Sov. Phys. JETP 21, 1135 (1965).
46. J. E. Smith, M. I. Nathan, and J. C. McGroddy, "Gunn effect in n-type InSb," Appl. Phys. Lett. 15, 242 (1969).
47. C. L. Dick and B. Ancker-Johnson, "Nonequilibrium carrier phenomena in n-type InSb," Phys. Rev. B 5, 526 (1972).
48. D. K. Ferry, H. Heinrich, W. Keeler, and E. A. Müller, "Gunn effect in InSb in a magnetic field," Phys. Rev. B 8, 1538 (1973).
49. G. Bauer and F. Kuchar, "Impact ionization in heavily doped n-InAs and n-InSb," Phys. Status Solidi A 13, 169 (1972).
50. R. C. Curby and D. Ferry, "Impact ionization in narrow gap semiconductors," Phys. Status Solidus 15, 319 (1973).
51. S. W. Kurnick and J. Powell, "Optical absorption in pure single crystal InSb at 298° K and 78° K," Phys. Rev. 116, 597 (1959).
52. R. A. Höpfel, J. Shah, and A. C. Gossard, "Nonequilibrium electron-hole plasma in GaAs quantum wells," Phys. Rev. Lett. 56, 765 (1986).
53. K. Leo and J. Collett, "Influence of electron-hole scattering on the plasma thermalization in doped GaAs," Phys. Rev. B 44, 5535 (1991).
54. X. Q. Zhou, K. Leo, and H. Kurz, "Ultrafast relaxation of photoexcited hot holes in n-doped III-V compounds studied by femtosecond luminescence," Phys. Rev. B 45, 3886 (1992).
55. B. Ancker-Johnson and C. Dick, "Impact ionization wavefront in p-InSb," Solid State Commun. 9, 125 (1971).
56. E. Dodin, V. Kozlov, and V. Piskarev, "High frequency breakdown in p-type InSb," Sov. Phys. JETP 39, 671 (1974).
57. M. Woerner, T. Elsaesser, and W. Kaiser, "Relaxation processes of hot holes in p-type germanium studied by picosecond infrared spectroscopy," Phys. Rev. B 45, 8378 (1992).
58. M. Woerner and T. Elsaesser, "Ultrafast thermalization of nonequilibrium holes in p-type tetrahedral semiconductors," Phys. Rev. B 51, 17490 (1995).
59. T. Elsaesser, J. Shah, L. Rota, and P. Lugli, "Initial thermalization of photoexcited carriers in GaAs studied by femtosecond luminescence spectroscopy," Phys. Rev. Lett. 66, 1757 (1991).
60. M. G. Kane, K. W. Sun, and S. A. Lyon, "Ultrafast carrier-carrier scattering among photoexcited nonequilibrium carriers in GaAs," Phys. Rev. B 50, 7428 (1994).
61. 2 laser radiation," Sov. J. Quantum Electron. 14, 668 (1984).
62. V. Kovalev and M. B. Surov, "Nonlinear absorption of opposite waves in InAs at the 10.6 μm wavelength," Sov. J. Quantum Electron. 17, 386 (1987).
63. V. Kovalev, M. B. Surov, and V. Trofimov, "Nonlinear absorption of counterpropagating waves in narrow gap semiconductors," Infrared Phys. 31, 343 (1991).
64. 2 laser radiation in narrow-gap semiconductors," Sov. J. Quantum Electron. 21, 1346 (1991).
65. J. Dempsey, J. Smith, G. D. Holah, and A. Miller, "Nonlinear absorption and pulse shaping in InSb," Opt. Commun. 26, 265 (1978).