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Volumn 202, Issue 2, 1997, Pages 961-976

Strong dephasing in a laser excited semiconductor due to carrier-plasmon scattering

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EID: 0031517764     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(199708)202:2<961::AID-PSSB961>3.0.CO;2-C     Document Type: Article
Times cited : (10)

References (53)
  • 17
    • 0000688816 scopus 로고
    • D. W. SNOKE, W. W. RUEHLE, Y.-C. YU, and E. BAUSER, Phys. Rev. Lett. 68, 990 (1992); Phys. Rev. B 45, 10979 (1992).
    • (1992) Phys. Rev. B , vol.45 , pp. 10979


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.