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Volumn 30, Issue SUPPL. PART 1, 1997, Pages

RF characteristics of GaAs power MESFET's with superlattice buffer layer

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0031507169     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (7)

References (11)
  • 4
    • 0029220190 scopus 로고
    • High-performance 0.15 um-gate-length pHEMTs Enhanced with a Low-temperature-grown GaAs Buffer
    • May
    • R. Actis, K. B. Nichols, W. F. Kopp, T. J. Rogers and F. W. Smith, High-performance 0.15 um-gate-length pHEMTs Enhanced with a Low-temperature-grown GaAs Buffer, in IEEE MTT-S Dig., May 1990, pp. 445-448.
    • (1990) IEEE MTT-S Dig. , pp. 445-448
    • Actis, R.1    Nichols, K.B.2    Kopp, W.F.3    Rogers, T.J.4    Smith, F.W.5
  • 6
    • 0022881837 scopus 로고
    • Application of GaAs/(Ga,Al)As super-lattices to dose rate hardening of GaAs MESFET's
    • Nov.
    • K. Tabatabaie-Alavi, B. W. Black and S. E. Bernack, Application of GaAs/(Ga,Al)As super-lattices to dose rate hardening of GaAs MESFET's, in GaAs 1C Symp. Tech. Dig., Nov. 1986, pp. 137-140.
    • (1986) GaAs 1C Symp. Tech. Dig. , pp. 137-140
    • Tabatabaie-Alavi, K.1    Black, B.W.2    Bernack, S.E.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.