Epitaxial overgrowth of goethite on hematite synthesized in phosphate media: A scanning force and transmission electron microscopy study

American Mineralogist

Volumn 82, Issue 11-12, 1997, Pages 1091-1100

  Barrón, Vidal ^a   Gálvez, Natividad ^a   Hochella Jr , Michael F ^b   Torrent, José ^a  

^a UNIVERSITY OF CÓRDOBA   (Spain)

^b VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; ELECTRON DIFFRACTION; HEMATITE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SILICON NITRIDE; STARS; TRANSMISSIONS; X RAY DIFFRACTION;

CRYSTALLIZATION RATES; DEFLECTION MODE; EPITAXIAL OVERGROWTH; FERRIC NITRATE; OPERATING CONDITION; PREFERENTIAL DISSOLUTION; SELECTED AREA ELECTRON DIFFRACTION; TWINNED CRYSTALS;

IRON METALLOGRAPHY;

FERRIHYDRITE; GOETHITE; HAEMATITE; PHOSPHATE;

EID: 0031430640     PISSN: 0003004X     EISSN: None     Source Type: Journal    
DOI: 10.2138/am-1997-11-1206     Document Type: Article

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