Optical characterization of As40S40Se20 inorganic resist

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3359, Issue , 1997, Pages 379-382

  Stronski, A V ^a   Vlcek M ^a   Shepeljavi, P E ^a   Stetsun, A I ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

Amine based etching solutions; As40S40Se20 layers; Optical properties; Raman spectra

Indexed keywords

AMINES; ANNEALING; CHARACTERIZATION; COMPOSITION; ETCHING; EVAPORATION; INORGANIC COMPOUNDS; OPACITY; RAMAN SCATTERING; THIN FILMS;

INORGANIC RESIST; OPTICAL CONSTANTS;

ARSENIC COMPOUNDS;

EID: 0031392895     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.306248     Document Type: Conference Paper

References (5)

1. Recording of holographic optical elements on As-S-Se layers
2. Holographic optical element fabrication using chalcogenide layers
3. Optical properties and photoinduced changes in amorphous As-S films
4. Refractive index behaviour of amorphous semiconductors and glasses
5. Fabrication of periodical structures with the help of chalcogenide inorganic resists