Deposition of dielectric PLT thin film by laser ablation

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3404, Issue , 1997, Pages 68-73

  Eun, Dong Seog ^a   Park, Joo Hyung ^a   Park, Jeong Heum ^a   Lee, Sang Yeol ^a   Park, Chang Yub ^a  

^a Yonsei University   (South Korea)

Author keywords

Dielectric constant; DRAM; Ferroelectric thin films; Laser ablation; Memory devices

Indexed keywords

CRYSTAL STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; DYNAMIC RANDOM ACCESS STORAGE; LASER ABLATION; PERMITTIVITY; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

MEMORY CELLS;

FERROELECTRIC THIN FILMS;

EID: 0031391956     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.308597     Document Type: Conference Paper

References (7)

1. Ferroelectric materials for 64Mb and 256Mb DRAMs
2. Electrical characterization of PLT thin films by LP-MOCVD
3. The effects of La concentration on the properties of PLT thin films: From the perspective of DRAM applications
4. 7-x thin films on GaAs substrates
5. 7-y superconducting thin films