Structure and properties of III-N semiconductor thin films grown at low temperatures by N-radical-assisted pulsed laser deposition

Materials Research Society Symposium - Proceedings

Volumn 482, Issue , 1997, Pages 337-341

  Fernandez, F E ^a   Pumarol, M ^a   Martinez, A ^a   Pantojas, V ^a   Garcia, M ^a  

^a UNIVERSITY OF PUERTO RICO   (Puerto Rico)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; FILM GROWTH; NITRIDES; PULSED LASER APPLICATIONS; REACTION KINETICS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; STOICHIOMETRY; SUBSTRATES; THIN FILMS;

NITRIDE RADICAL ASSISTED PULSED LASER DEPOSITION;

SEMICONDUCTING FILMS;

EID: 0031388670     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-482-337     Document Type: Conference Paper

References (9)