Emission and capture kinetics for a hydrogen-related negative-U center in silicon: Evidence for metastable neutral charge state

Materials Science Forum

Volumn 258-263, Issue PART 1, 1997, Pages 217-222

  Markevich, V P ^a   Murin, L I ^b   Sekiguchi, T ^a   Suezawa, M ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

Author keywords

Capture; Electronic structure; Emission; Hydrogen related center; Metastable state; Silicon

Indexed keywords

CRYSTAL DEFECTS; CRYSTALLINE MATERIALS; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; HYDROGEN; STATISTICAL MECHANICS; THERMODYNAMIC STABILITY;

ELECTRON CAPTURE; METASTABLE NEUTRAL CHARGE STATES; NON EQUILIBRIUM OCCUPANCY STATISTICS;

SEMICONDUCTING SILICON;

EID: 0031387484     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.217     Document Type: Article

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