Selective etching of wide bandgap nitrides

Materials Research Society Symposium - Proceedings

Volumn 483, Issue , 1997, Pages 155-161

  Shul, R J ^a   Willison, C G ^a   Bridges, M M ^a   Han, J ^a   Lee, J W ^a   Pearton, S J ^a   Abernathy, C R ^a   MacKenzie, J D ^a   Donovan, S M ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; ENERGY GAP; HETEROJUNCTIONS; HYDROGEN; ION BOMBARDMENT; NITRIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

ALUMINUM NITRIDES; GALLIUM NITRIDES; INDUCTIVELY COUPLED PLASMAS (ICP);

PLASMA ETCHING;

EID: 0031386617     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-483-155     Document Type: Conference Paper

References (12)