Elemental analysis on group-III nitrides using heavy ion ERD

Materials Research Society Symposium - Proceedings

Volumn 482, Issue , 1997, Pages 745-756

  Dollinger, G ^a   Karsch, S ^a   Ambacher, O ^a   Angerer, H ^a   Bergmaier, A ^a   Schmelmer, O ^a   Stutzmann, M ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL IMPURITIES; HYDROGEN; ION BEAMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; NITRIDING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

ELASTIC RECOIL DETECTION (ERD); ENERGETIC HEAVY ION BEAMS;

NITRIDES;

EID: 0031386533     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (28)