Numerical simulations of the SiC thyristor's on state and gate turn off performance

Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

Volumn , Issue , 1997, Pages 245-254

  Shah, Pankaj ^a   Jones, Kenneth A ^a  

^a AMSRL SE SA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL IMPURITIES; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; IONIZATION OF SOLIDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SILICON CARBIDE;

CARRIER MOBILITY; NEGATIVE DIFFERENTIAL RESISTANCE (NDR) REGION;

THYRISTORS;

EID: 0031386215     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/cornel.1997.649364     Document Type: Conference Paper

References (13)