Einstein relation and transport equations in heavily doped silicon

Proceedings of the International Conference on Microelectronics

Volumn 1, Issue , 1997, Pages 177-180

  Trajkovic, A ^a   Ristic, S ^a   Prijic, Z ^a   Mijalkovic, S ^a  

^a UNIVERSITY OF NI   (Serbia)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; DIFFUSION IN SOLIDS; ENERGY GAP; SEMICONDUCTOR DOPING;

EINSTEIN RELATION;

SEMICONDUCTING SILICON;

EID: 0031385866     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)