Auger recombination in antimony-based, strain-balanced, narrow-band-gap superlattices

Materials Research Society Symposium - Proceedings

Volumn 484, Issue , 1997, Pages 83-88

  Olesberg, J T ^a   Boggess, Thomas F ^a   Anson, S A ^a   Jang, D J ^a   Flatte, M E ^a   Hasenberg, T C ^a   Grein, C H ^a  

^a UNIVERSITY OF IOWA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; BAND STRUCTURE; DENSITY MEASUREMENT (OPTICAL); ENERGY GAP; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR LASERS; THERMAL EFFECTS; THERMAL VARIABLES MEASUREMENT;

AUGER PROCESS; AUGER RECOMBINATION; CARRIER LIFETIME; FERMI STATISTICS; MID-INFRARED LASERS; UMKLAPP PROCESS; VALENCE BAND;

SEMICONDUCTOR SUPERLATTICES;

EID: 0031385552     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)