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Volumn 470, Issue , 1997, Pages 319-324
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Deep diffusions and SOI layers produced by rapid thermal processing for smart power applications
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Author keywords
[No Author keywords available]
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Indexed keywords
ALUMINUM;
BORON;
CRYSTALLIZATION;
DIFFUSION;
EPITAXIAL GROWTH;
MELTING;
SILICON WAFERS;
THERMAL GRADIENTS;
POWER DEVICES;
RAPID THERMAL PROCESSING;
TEMPERATURE GRADIENT ZONE MELTING;
SILICON ON INSULATOR TECHNOLOGY;
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EID: 0031384983
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-470-319 Document Type: Conference Paper |
Times cited : (2)
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References (15)
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