Lattice location and luminescence behavior of rare earth elements implanted in GaN

Materials Research Society Symposium - Proceedings

Volumn 482, Issue , 1997, Pages 1021-1026

  Dalmer, M ^a   Restle, M ^a   Stoetzler, A ^a   Vetter, U ^a   Hofsaess, H ^a   Bremser, M D ^a   Ronning, C ^a   Davis, R F ^a  

^a UNIVERSITY OF KONSTANZ   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL LATTICES; ION IMPLANTATION; NITRIDES; OXYGEN; PHOTOLUMINESCENCE; RADIOISOTOPES; RELAXATION PROCESSES; SINGLE CRYSTALS; THULIUM; YTTERBIUM;

GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031384169     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-482-1021     Document Type: Conference Paper

References (19)