Microstructure of pyramidal defects in InSb layers grown by atomic layer molecular beam epitaxy on InP substrates

Journal de physique. III

Volumn 7, Issue 12, 1997, Pages 2317-2324

  Ferrer, J C ^a   Peiro, F ^a   Cornet, A ^a   Morante, J R ^a   Utzmeier, T ^a   Briones, F ^a  

^a UNIVERSITY OF BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTAL LATTICES; CRYSTAL MICROSTRUCTURE; DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MORPHOLOGY; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; THIN FILMS;

STACKING FAULTS;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0031383797     PISSN: 11554320     EISSN: None     Source Type: Journal    
DOI: 10.1051/jp3:1997261     Document Type: Article

References (11)