Electrical filamentation in ggMOS protection structures

Electrical Overstress/Electrostatic Discharge Symposium Proceedings

Volumn , Issue , 1997, Pages 330-336

  Vashchenko, V A ^a   Martynov, J B ^a   Sinkevitch, V F ^a  

^a State Research Inst `Pulsar'   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC DISCHARGES; ELECTROSTATICS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

ELECTRICAL FILAMENTATION; ISOTHERMAL CURRENT INSTABILITY; LIGHTLY DOPED DRAIN (LDD);

MOS DEVICES;

EID: 0031383750     PISSN: 07395159     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/eosesd.1997.634260     Document Type: Conference Paper

References (22)