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Volumn 477, Issue , 1997, Pages 291-296
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High quality epitaxial V2O3 thin films: A material for infrared switching devices?
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC CONDUCTIVITY OF SOLIDS;
ELECTRON BEAMS;
ELECTRON TRANSPORT PROPERTIES;
EPITAXIAL GROWTH;
EVAPORATION;
FILM GROWTH;
INFRARED TRANSMISSION;
LIGHT MEASUREMENT;
PHOTONS;
SAPPHIRE;
THERMAL EFFECTS;
VANADIUM COMPOUNDS;
ELECTRON BEAM EVAPORATION;
METAL INSULATOR TRANSITIONS (MIT);
OPTICAL CONSTANTS;
OSCILLATOR FIT METHOD;
THIN FILMS;
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EID: 0031382428
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-474-291 Document Type: Conference Paper |
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Times cited : (2)
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References (8)
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