Stability enhancement of organic electroluminescent diode through buffer layer or rubrene doping in hole-transporting layer

Synthetic Metals

Volumn 91, Issue 1-3, 1997, Pages 131-132

  Zhang, Zhi Lin ^a   Jiang, Xue Yin ^a   Xu, Shao Hong ^a   Nagatomo, T ^b   Omoto, O ^b  

^a SHANGHAI UNIVERSITY   (China)

^b SHIBAURA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Buffer layers; Organic electroluminescent diodes; Rubrene

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; LUMINESCENT DEVICES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING;

BUFFER LAYERS; ORGANIC ELECTROLUMINESCENT DIODES; RUBRENE;

SEMICONDUCTOR DIODES;

EID: 0031381011     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0379-6779(98)80073-8     Document Type: Article

References (3)

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3. T. Sano, Y. Hamata and K. Shibata, Proc. Inorganic and Organic EL/ EL '96, Berlin, Germany, p. 249.