Dielectric characterization of sol-gel derived Sn doped ZrTiO4 thin films

Integrated Ferroelectrics

Volumn 17, Issue 1-4, 1997, Pages 221-230

  Alexander, T P ^a   Uhlmann, D R ^a   Teowee, G ^b   McCarthy, K ^b   McCarthy, F ^b   Bukowski, T J ^b  

^a University of Arizona   (United States)

^b Donnelly Corporation   (United States)

Author keywords

Dielectric constant; Dissipation factor; Sol gel; ZrTiO4 thin films

Indexed keywords

COMPOSITION EFFECTS; DOPING (ADDITIVES); FERROELECTRIC DEVICES; HIGH TEMPERATURE EFFECTS; LEAKAGE CURRENTS; PERMITTIVITY; SILICON WAFERS; SOL-GELS; THIN FILMS; TIN; ZIRCONIUM COMPOUNDS;

DISSIPATION FACTOR; MULTIPLE SPINCOATING;

DIELECTRIC FILMS;

EID: 0031380796     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589708012997     Document Type: Article

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