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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 12 A, 1997, Pages 7317-7322

Amorphous titanium silicide phase formation by surface microroughness on Si(100)

(3) Lee, Sukjae a Lee, Hwackjoo b Jeon, Hyeongtag c

a Hynix Semiconductor Inc (South Korea)

b Korea Research Institute of Standards and Science (South Korea)

c Hanyang University (South Korea)

Author keywords

Amorphous Ti silicide phase; Atomic scale steps and pits; Surface microroughness

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; MORPHOLOGY; OXIDES; SILICON; SUBSTRATES; SURFACE ROUGHNESS; SURFACES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON BEAM EVAPORATOR; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; SURFACE MICROROUGHNESS;

AMORPHOUS FILMS;

EID: 0031380356 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.36.7317 Document Type: Article

Times cited : (7)

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