Single crystal silicon carbide on silicon using a supersonic gas jet of methylsilane

Materials Research Society Symposium - Proceedings

Volumn 483, Issue , 1997, Pages 279-284

  Ustin, S A ^a   Long, C ^a   Lauhon, L ^a   Ho, W ^a  

^a Department of Obstetrics Gynecology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL SYMMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); LIGHT REFLECTION; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SINGLE CRYSTALS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

METHYLSILANES; SUPERSONIC GAS JETS; TRANSMISSION ELECTRON DIFFRACTION (TED);

SEMICONDUCTING SILICON;

EID: 0031380162     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-483-279     Document Type: Conference Paper

References (6)