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Volumn 482, Issue , 1997, Pages 411-416
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Comparative study of typical defects in III-nitride thin films and their alloys
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL GROWTH;
CRYSTAL MICROSTRUCTURE;
DISLOCATIONS (CRYSTALS);
ELECTRIC PROPERTIES;
GRAIN BOUNDARIES;
HETEROJUNCTIONS;
METALLOGRAPHIC MICROSTRUCTURE;
OPTICAL PROPERTIES;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR GROWTH;
THIN FILMS;
TRANSMISSION ELECTRON MICROSCOPY;
DIFFRACTION CONTRAST ANALYSIS;
INVERSION DOMAINS;
MULTIPLE DARK FIELD IMAGING;
SEMICONDUCTING FILMS;
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EID: 0031379854
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-482-411 Document Type: Conference Paper |
Times cited : (6)
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References (10)
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