Epitaxial n-Si/p-CuInS2 heterojunction devices

Solar Energy Materials and Solar Cells

Volumn 49, Issue 1-4, 1997, Pages 337-342

  Metzner, H ^a   Hahn, Th ^a   Schmiga, Chr ^a   Bremer, J H ^a   Borchert, D ^b   Fahrner, W R ^b   Seibt, M ^a  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

^b UNIVERSITY OF HAGEN   (Germany)

Author keywords

Epitaxy; Heterojunction; Photoelectric properties

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CRYSTAL STRUCTURE; ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; PHOTOELECTRICITY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY;

COPPER INDIUM SULFIDE; EX SITU STRUCTURAL CHARACTERIZATION; INDIUM TIN OXIDE; METALLIC CONTACTS;

HETEROJUNCTIONS;

EID: 0031379764     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(97)00074-3     Document Type: Article

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