Role of vacancies and interstitials in transient enhanced diffusion of arsenic implanted into silicon

Materials Research Society Symposium - Proceedings

Volumn 469, Issue , 1997, Pages 315-321

  Venables, D ^a   Krishnamoorthy, V ^a   Gossmann, H J ^a   Lilak, A ^a   Jones, K S ^a   Jacobson, D C ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; DIFFUSION IN SOLIDS; FERMI LEVEL; ION IMPLANTATION; SEMICONDUCTING ANTIMONY; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING; SEMICONDUCTOR SUPERLATTICES;

TRANSIENT ENHANCED DIFFUSION;

SEMICONDUCTING SILICON;

EID: 0031379691     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-469-315     Document Type: Conference Paper

References (18)