Micromachined mold-type double-gated metal field emitters

Journal of Micromechanics and Microengineering

Volumn 7, Issue 4, 1997, Pages 332-337

  Lee, Yongjae ^a   Kang, Seokho ^a   Chun, Kukjin ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; ELECTRON BEAM LITHOGRAPHY; LOGIC GATES; MOLYBDENUM; REACTIVE ION ETCHING; VOLTAGE MEASUREMENT;

EXTRACTION GATES; FOCUSING GATES; HOLE TRENCH; MOLD TYPE DOUBLE GATED METAL FIELD EMITTERS;

MICROMACHINING;

EID: 0031378383     PISSN: 09601317     EISSN: None     Source Type: Journal    
DOI: 10.1088/0960-1317/7/4/009     Document Type: Article

References (7)

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3. Lee K Y et al 1994 High aspect ratio aligned multilayer microstructure fabrication J. Vac. Sci. Technol. B 12
4. Zimmerman S M et al 1991 A fabrication method for the integration of vacuum microelectronic devices IEEE Trans. Electron. Devices ED-38
5. Seidel H et al 1990 Anisotropic etching of crystalline silicon in alkaline solutions J. Electrochem. Soc. 137
6. Busta H H et al 1993 Collector-assisted operation of micromachined field-emitter triodes IEEE Trans. Electron Devices ED-40
7. Brodie I et al 1992 Vacuum microelectronics Adv. Electron. Electron Phys. vol 83 (New York: Academic) pp 91-5