Novel concept for high level overdrive tolerance of GaAs based FETs

Electrical Overstress/Electrostatic Discharge Symposium Proceedings

Volumn , Issue , 1997, Pages 27-32

  Lipka, K M ^a   Schmid, P ^a   Birk, M ^a   Demmler, M ^a   Schneider, J ^a   Splingart, B ^a   Tasker, P J ^a   Heinecke, H ^a   Kohn, E ^a  

^a UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTROSTATICS; LOW TEMPERATURE OPERATIONS; PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

ELECTROSTATIC DISCHARGE (ESD); FAILURE VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 0031378242     PISSN: 07395159     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/eosesd.1997.634223     Document Type: Conference Paper

References (7)